FDS8876 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. FDS8876 N-Channel PowerTrench® MOSFET Switching Characteristics (VGS = 10V) tON Turn-On Time.
FDS8876 Key Features
- rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
- rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- RoHS pliant