FDS8876 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Key Features
- rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
- rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
