FDS8876 Datasheet | Fairchild Semiconductor

FDS8876 N-Channel PowerTrench® MOSFET April 2007 FDS8876 N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2mΩ tm Features - rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A - rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A - High performance trench technology for extremely low rDS(on) - Low gate charge - High power and current handling capability - RoHS pliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications - DC/DC converters Branding Dash 1 2 3 4 SO-8 54 63 72...