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FDS8876 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

DC/DC converters Bra

Key Features

  • rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A.
  • rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8876 N-Channel PowerTrench® MOSFET April 2007 FDS8876 N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2mΩ tm Features „ rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A „ rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications „ DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B 1 www.fairchildsemi.