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FDS8876 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 30 V, 12.5 A, 8.2 mW FDS8876, FDS8876-F40.

General Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A.
  • rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDS8876 N-Channel MOSFET Fairchild Semiconductor

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