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FDS8878 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters ww

Key Features

  • rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A.
  • rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8878 N-Channel PowerTrench® MOSFET June 2005 FDS8878 N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ Features „ rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A „ rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications „ DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS8878 Rev. A1 1 www.fairchildsemi.