FDS8870 N-Channel MOSFET

Fairchild Semiconductor

Description

FDS8870 N-Channel PowerTrench® MOSFET April 2007 FDS8870 tm N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS8870
Manufacturer: Fairchild Semiconductor
File Size: 386.42 KB
Datasheet: FDS8870_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 4.2mΩ, VGS = 10V, ID = 18A
* rDS(on) = 4.9mΩ, VGS = 4.5V, ID = 17A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability

Applications

* DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Fairchild Semiconductor Corporation 1 FDS8870 Rev. B www. fairchildsemi. com FDS8870 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain t

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FDS8870 N-Channel MOSFET Fairchild Semiconductor

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