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FDS8884 N-Channel MOSFET

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Description

FDS8884 N-Channel PowerTrench® MOSFET MPLEMENTATION FDS8884 N-Channel PowerTrench® MOSFET LE 30V, 8.5A, 23mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional s.

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Features

* Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
* Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
* Low gate charge
* 100% RG Tested
* RoHS Compliant D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Para

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