FDS8858CZ MOSFET

Fairchild Semiconductor

Description

FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A.
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been espe.

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Datasheet Specifications

Part number: FDS8858CZ
Manufacturer: Fairchild Semiconductor
File Size: 293.50 KB
Datasheet: FDS8858CZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
* Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel
* Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
* Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
* High power and handing capability in a w

Applications

* where low in-line power loss and fast switching are required. Applications
* Inverter
* Synchronous Buck SO-8 D2 D2 D1 D1 Pin 1 G2

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FDS8858CZ MOSFET Fairchild Semiconductor

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