FDS8858CZ Datasheet - Fairchild Semiconductor

FDS8858CZ MOSFET

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and bat.

FDS8858CZ Features

* Q1: N-Channel

* Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A

* Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel

* Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A

* Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A

* High power and handing capability in a w

FDS8858CZ Datasheet (293.50 KB)