FDS8878 - N-Channel MOSFET
FDS8878 Features
* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and
