FDS8878 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDS8878
Manufacturer: ON Semiconductor ↗
File Size: 374.85 KB
Datasheet: FDS8878-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and

Applications

* DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 30 V VGSS Gate to Source Voltage ±20 V ID Drain Continuous (TA = 25°C, 10.2 A Current VGS = 10 V, RqJA = 50°C/W) Continuous (TA = 25°C, 9.

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FDS8878 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDS8878-like datasheet