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FDS8817NZ N-Channel MOSFET

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Description

FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 FDS8817NZ N-Channel 30V, 15A, 7.0mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Applications

* common in Notebook Computers and Portable Battery Packs.
* Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A
* HBM ESD protection level of 3.8kV typical (note 3)
* High performance trench technology for extremely low rDS(on)

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