FDS8878-F123 Datasheet, Mosfet, ON Semiconductor

✔ FDS8878-F123 Features

rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
High Performance Trench Technology for Extremely Low rDS(on)
Low Gate Charge
H

✔ FDS8878-F123 Application

DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Un

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FDS8878-F123

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N-channel mosfet. This N*Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous o

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MOSFET N-CH 30V 10.2A 8SOIC

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FDS8878-F123 N-Channel MOSFET ON Semiconductor