FDS8878-F123, FDS8878 Datasheet - ON Semiconductor

FDS8878-F123 - N-Channel MOSFET

FDS8878-F123 Features

* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A

* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A

* High Performance Trench Technology for Extremely Low rDS(on)

* Low Gate Charge

* High Power and Current Handling Capability

* These Devices are Pb

* Free and

Datasheet Details

FDS8878-F123, FDS8878

374.85 KB

N-channel mosfet.

This datasheet PDF includes multiple part numbers: FDS8878-F123, FDS8878.
Please refer to the document for exact specifications by model.

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