FDS8878-F123 Features
* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and
Datasheet Details
FDS8878-F123, FDS8878
374.85 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: FDS8878-F123, FDS8878.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
FDS8878 N-Channel MOSFET (Fairchild Semiconductor)
FDS8878 N-Channel MOSFET (ON Semiconductor)
FDS8870 N-Channel MOSFET (Fairchild Semiconductor)
FDS8874 N-Channel MOSFET (Fairchild Semiconductor)
FDS8876 N-Channel MOSFET (Fairchild Semiconductor)
FDS8876 N-Channel MOSFET (ON Semiconductor)
FDS8812NZ N-Channel MOSFET (Fairchild Semiconductor)
FDS8813NZ N-Channel MOSFET (Fairchild Semiconductor)
FDS8878-F123 Distributor
