Description
MOSFET * N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123 General .
This N.
Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or convent.
Features
* rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A
* rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free and
Applications
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
30
V
VGSS Gate to Source Voltage
±20
V
ID
Drain
Continuous (TA = 25°C,
10.2
A
Current VGS = 10 V, RqJA = 50°C/W)
Continuous (TA = 25°C,
9.
