FDS8876 N-Channel MOSFET

Fairchild Semiconductor

Description

FDS8876 N-Channel PowerTrench® MOSFET April 2007 FDS8876 N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2mΩ tm .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS8876
Manufacturer: Fairchild Semiconductor
File Size: 436.18 KB
Datasheet: FDS8876_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
* rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability

Applications

* DC/DC converters Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B 1 www. fairchildsemi. com FDS8876 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Vo

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FDS8876 N-Channel MOSFET Fairchild Semiconductor

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