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FDS8812NZ Datasheet - Fairchild Semiconductor

FDS8812NZ N-Channel MOSFET

* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A * Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A * HBM ESD protection level of 6.4KV typical (note 3) * High performance trench technology for extremely low rDS(on) * High power and current handling capability .

FDS8812NZ_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS8812NZ

Manufacturer:

Fairchild Semiconductor

File Size:

469.83 KB

Description:

N-channel mosfet.

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FDS8812NZ FDS8812NZ N-Channel MOSFET Fairchild Semiconductor