FDS8812NZ - N-Channel MOSFET
* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A * Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A * HBM ESD protection level of 6.4KV typical (note 3) * High performance trench technology for extremely low rDS(on) * High power and current handling capability
