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FDS8812NZ - N-Channel MOSFET

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FDS8812NZ Product details

Description

Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A. Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A. HBM ESD protection level of 6.4KV typical (note 3). High performance trench technology for extremely low rDS(on). High power and current handling capability. RoHS compliant This N-Channel MOSF.

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS8812NZ-like datasheet

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