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FDS8840NZ N-Channel MOSFET

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Description

FDS8840NZ N-Channel Power Trench® MOSFET April 2009 FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ .
The FDS8840NZ has been designed to minimize losses in power conversion application.

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Features

* Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A
* Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A
* HBM ESD protection level of 6 kV typical(note 3)
* High performance trench technology for extremely low rDS(on) and fast switching
* High power and current h

Applications

* Synchronous Buck for Vcore and Server
* Notebook Battery Pack
* Load Switch D D D D D G S S Pin 1 S D S D S S D G SO-8 www. DataSheet4U. com MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate t

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