FDS8813NZ - N-Channel MOSFET
* Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A * Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A * HBM ESD protection level of 5.6KV typical (note 3) * High performance trench technology for extremely low rDS(on) * High power and current handling capability
