FDS8876 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 12.5 A, 8.2 mW FDS8876, FDS8876-F40 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDS8876
Manufacturer: ON Semiconductor ↗
File Size: 353.41 KB
Datasheet: FDS8876-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A
* rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* These Devices are Pb
* Free

Applications

* DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 30 V VGSS Gate to Source Voltage ±20 V ID Drain Continuous (TA = 25°C, 12.5 A Current VGS = 10 V, RqJA = 50°C/W) Continuous (TA = 25°C, 11

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FDS8876 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDS8876-like datasheet