FDS8896 N-Channel MOSFET

ON Semiconductor

Description

FDS8896 N-Channel PowerTrench® MOSFET FDS8896 N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS8896
Manufacturer: ON Semiconductor ↗
File Size: 543.17 KB
Datasheet: FDS8896-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* rDS(on) = 6.0mΩ, VGS = 10V, ID = 15A
* rDS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A
* High performance trench technology for extremely low rDS(on)
* Low gate charge
* High power and current handling capability

Applications

* DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Semiconductor Components Industries, LLC. 1 October-2017, Rev. 2 Publication Order Number: FDS8896/D FDS8896 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS

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FDS8896 N-Channel MOSFET ON Semiconductor

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