Datasheet4U Logo Datasheet4U.com

FDS8882 - N-Channel MOSFET

📥 Download Datasheet

Preview of FDS8882 PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDS8882 Product details

Description

Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant The FDS8882 has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while

Features

📁 Related Datasheet

  • FDS8858CZ - Dual-Channel MOSFET (ON Semiconductor)
  • FDS8876 - N-Channel MOSFET (ON Semiconductor)
  • FDS8878 - N-Channel MOSFET (ON Semiconductor)
  • FDS8878-F123 - N-Channel MOSFET (ON Semiconductor)
  • FDS8896 - N-Channel MOSFET (ON Semiconductor)
  • FDS8433A - P-Channel MOSFET (ON Semiconductor)
  • FDS8447 - N-Channel 40V MOSFET (VBsemi)
  • FDS8449 - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

Fairchild Semiconductor FDS8882-like datasheet

FDS8882 Stock/Price