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FDS8882 N-Channel MOSFET

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Description

FDS8882 N-Channel PowerTrench® MOSFET FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ December 2008 .
Max rDS(on) = 20. Max rDS(on) = 22. High performance trench te.

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Datasheet Specifications

Part number
FDS8882
Manufacturer
Fairchild Semiconductor
File Size
293.09 KB
Datasheet
FDS8882_FairchildSemiconductor.pdf
Description
N-Channel MOSFET

Applications

* Notebook System Regulators
* DC/DC Converters D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous

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