FDS8882 Datasheet - Fairchild Semiconductor

Datasheet Details

Part number:

FDS8882

Manufacturer:

Fairchild Semiconductor

File Size:

293.09 KB

Description:

N-Channel MOSFET

FDS8882 N-Channel PowerTrench® MOSFET FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ December 2008 Features General Description * Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A * Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A * High performance trench technology

FDS8882_FairchildSemiconductor.pdf

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FDS8882, N-Channel MOSFET

* Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A * Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A * High performance trench technology for extremely low rDS(on) and fast switching * High power and current handling capability * Termination is Lead-free and RoHS

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FDS8882 N-Channel MOSFET Fairchild Semiconductor

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