FDS8817NZ

N-Channel MOSFET

ON Semiconductor

FDS8817NZ Features

* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A

* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A

* HBM ESD Protection Level of 3.8 kV Typical

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability

FDS8817NZ General Description

This N

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDS8817NZ Datasheet (297.20 KB)