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FDS8817NZ - N-Channel MOSFET

FDS8817NZ Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 15 A, 7.0 mW FDS8817NZ, FDS8817NZ-G General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

FDS8817NZ Features

* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
* HBM ESD Protection Level of 3.8 kV Typical
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability

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N-Channel MOSFET ON Semiconductor
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