Datasheet Details
Part number:
FDS8333C
Manufacturer:
Fairchild Semiconductor
File Size:
134.75 KB
Description:
30V N & P-Channel PowerTrench MOSFETs
Features
* Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V
* 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =
* 10 V RDS(ON) = 200 mΩ @ V GS =
* 4.5 V
* Q2
* Low gate charge High performance trench technology for extremely
FDS8333C_FairchildSemiconductor.pdf
FDS8333C, 30V N & P-Channel PowerTrench MOSFETs
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications wher
FDS8333C Distributor
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