FDS8333C 30V N & P-Channel PowerTrench MOSFETs

Fairchild Semiconductor

Description

FDS8333C August 2002 FDS8333C 30V N & P-Channel PowerTrench® MOSFETs General .
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on.

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Datasheet Specifications

Part number: FDS8333C
Manufacturer: Fairchild Semiconductor
File Size: 134.75 KB
Datasheet: FDS8333C_FairchildSemiconductor.pdf
Description: 30V N & P-Channel PowerTrench MOSFETs

Features

* Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V
* 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =
* 10 V RDS(ON) = 200 mΩ @ V GS =
* 4.5 V
* Q2
* Low gate charge High performance trench technology for extremely

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FDS8333C 30V P-Channel PowerTrench MOSFETs Fairchild Semiconductor

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