FDS8333C - 30V N & P-Channel PowerTrench MOSFETs

Fairchild Semiconductor

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Datasheet Details

Part number: FDS8333C
Manufacturer: Fairchild Semiconductor
File Size: 134.75 KB
Datasheet: FDS8333C_FairchildSemiconductor.pdf
Description: 30V N & P-Channel PowerTrench MOSFETs

FDS8333C Product details

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V.
3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =.
10 V RDS(ON) = 200 mΩ @ V GS =.
4.5 V.
Q2.
Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Q2 D1 D D1 D DD2 D2 D 5 6 Q1 4 3 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S Absolute Maximum Ratings.

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30V P-Channel PowerTrench MOSFETs Fairchild Semiconductor

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