FDS8333C Datasheet - Fairchild Semiconductor

FDS8333C 30V N & P-Channel PowerTrench MOSFETs

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications wher.

FDS8333C Features

* Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V

* 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =

* 10 V RDS(ON) = 200 mΩ @ V GS =

* 4.5 V

* Q2

* Low gate charge High performance trench technology for extremely

FDS8333C_FairchildSemiconductor.pdf