FDS86240 Datasheet - ON Semiconductor

N-Channel MOSFET

FDS86240 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A * Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling Capability in a Widely Used Sur.

FDS86240 Datasheet (328.85 KB)

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FDS86240

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ON Semiconductor ↗

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328.85 KB

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N-channel mosfet.
FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Feat.

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FDS86240 N-Channel MOSFET ON Semiconductor

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FDS86240 General Description

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