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FDS86540 N-Channel MOSFET

FDS86540 Description

FDS86540 N-Channel PowerTrench® MOSFET FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

FDS86540 Features

* Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
* High performance trench technologh for extremely low rDS(on)
* High power and current handing capability in a widely used surface mount package
* 100% UIL Tested

FDS86540 Applications

* Primary Switch in isolated DC-DC
* Synchronous Rectifier
* Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source

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