Datasheet Details
| Part number | FDS86106 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 214.50 KB |
| Description | MOSFET |
| Datasheet |
 FDS86106 Datasheet
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| Part number | FDS86106 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 214.50 KB |
| Description | MOSFET |
| Datasheet |
FDS86106 Datasheet
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Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
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