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FDS86106 MOSFET

FDS86106 Description

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ .
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3. Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2. High performance trench te.

FDS86106 Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curre

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