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FDS86106 Datasheet - Fairchild Semiconductor

Datasheet Details

Part number:

FDS86106

Manufacturer:

Fairchild Semiconductor

File Size:

214.50 KB

Description:

MOSFET

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description * Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A * Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A * High performance trench technolo

FDS86106-FairchildSemiconductor.pdf

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FDS86106, MOSFET

* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A * Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package * 100% UIL Test

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