FDS86106 MOSFET

Fairchild Semiconductor

Description

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ .
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3. Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2. High performance trench te.

📥 Download Datasheet

FDS86106 Datasheet Preview — Preview of FDS86106 PDF

Datasheet Specifications

Part number: FDS86106
Manufacturer: Fairchild Semiconductor
File Size: 214.50 KB
Datasheet: FDS86106-FairchildSemiconductor.pdf
Description: MOSFET

Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curre

FDS86106 Distributors

📁 Related Datasheet

FDS8672S FDS8433A FDS8447 FDS8449 FDS8449-F085 FDS8817NZ

📌 All Tags

FDS86106 MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDS86106-like datasheet