Datasheet Details
- Part number
- FDS86106
- Manufacturer
- Fairchild Semiconductor
- File Size
- 214.50 KB
- Datasheet
- FDS86106-FairchildSemiconductor.pdf
- Description
- MOSFET
FDS86106 Description
FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ .
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.
Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.
High performance trench te.
FDS86106 Applications
* Synchronous Rectifier
* Primary Switch For Bridge Topology
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curre
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