FDS86106 Datasheet - Fairchild Semiconductor

FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description * Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A * Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A * High performance trench technolo