FDS8672S Datasheet - ON Semiconductor

N-Channel MOSFET

FDS8672S Features

* Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A

* Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A

* Includes SyncFET Schottky Body Diode

* High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching

* High Power and Current Handling Capabili

FDS8672S General Description

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integ.

FDS8672S Datasheet (377.02 KB)