FDS8670 Datasheet (Fairchild Semiconductor) - 30V N-Channel PowerTrench MOSFET

FDS8670, 30V N-Channel PowerTrench MOSFET

This device has been designed specifically to improve the efficiency of DC-DC converters.

Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses.

Low gate resistance and very low Miller charge enable excellent

FDS8670 Features

* 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant Applications