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FDS86141 N-Channel MOSFET

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Description

FDS86141 N-Channel Power Trench® MOSFET www.onsemi.com FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ .
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A. Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5. High performance trench techno.

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Applications

* DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Ene

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