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FDS86242 Datasheet - ON Semiconductor

N-Channel Power MOSFET

FDS86242 General Description

* Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A * Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A * High performance trench technology for extremely low rDS(on) This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced Power T rench® process that has been optimized.

FDS86242 Datasheet (382.92 KB)

Preview of FDS86242 PDF

Datasheet Details

Part number:

FDS86242

Manufacturer:

ON Semiconductor ↗

File Size:

382.92 KB

Description:

N-channel power mosfet.

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FDS86242 N-Channel Power MOSFET ON Semiconductor

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