M09 Datasheet | Specifications & PDF Download

Product Specification ( ) Preliminary Specification ( √ ) Approval Specification Any modification of Spec is not allowed without SDC‟s permission. C

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L78M TO-220 TO-220FP DPAK IPAK Features • Output current to 0.5 A • Output voltages of 5; 6; 8; 9; 10; 12; 15; 24 V • Thermal overload protection

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C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

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E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • Fully isolated package for simplified a

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QM09N65F-VB QM09N65F-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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L78M TO-220 TO-220FP DPAK IPAK Features • Output current to 0.5 A • Output voltages of 5; 6; 8; 9; 10; 12; 15; 24 V • Thermal overload protection

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BA178M T / BA178M FP series Regulator ICs Standard 78M series, 3-pin regulator BA178M T / BA178M FP series The BA178M T and BA178M FP series ar

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Global LCD Panel Exchange Center www.panelook.com Samsung Secret Product Information Customer : General SAMSUNG TFTTFT-LCD DATE : 23. May. 2011

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NJM78M00 3-TERMINAL POSITIVE VOLTAGE REGULATOR GENERAL DESCRIPTION The NJM78M00 series of 3-Terminal Positive Voltage Regulators is constructed usin

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WHM0913AE 0.9- 1.3 GHz LOW NOISE WIDE BAND AMPLIFIER REV A August 2008 Key Features • 0.9 ~ 1.3 GHz • 0.70 dB Noise Figure • 30.0 dBm Output IP3 • 1

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WHM0913R 0.9 – 1.25 GHz WIDE BAND LOW NOISE AMPLIFIER REV A June 2011 Key Features  0.9 ~ 1.25 GHz  0.80 dB noise figure  34.0 dBm output IP3

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isc N-Channel MOSFET Transistor APT10M09B2VFR FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source

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NJM79L00 3-TERMINAL NEGATIVE VOLTAGE REGULATOR ■ GENERAL DESCRIPTION The NJM79L00 series of 3-Terminal Negative Voltage Regulators is constructed us

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SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS(ON) 0.75Ω I D 9A Pb-free; RoHS-compliant TO-220 G D S TO-

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