M20N-8 Datasheet | Specifications & PDF Download

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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SPICE MODEL: SDM20N40A Lead-free Green SDM20N40A DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT Features · · · · Low Forward Voltage Drop

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HM20N50A HM20N50A 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. Th

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested

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ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maxi

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March 2011 PRELIMINARY MM20N050P 500V 20A N-Channel MOSFET RoHS Compliant FEATURES □ Low drain-source ON resistance □ High forward transfer admittan

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MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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+0 1 ) General Description： HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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ADV ADM20N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO251 2 1 23 Absolute Maxim

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V ID25 15 A

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Not for new designs Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Sho

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IGBT Features  1200V,20A  VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms +

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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IGBT Features  1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V，20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square

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