HM20N06KA - N-Channel Enhancement Mode Power MOSFET

Description

The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =60V,ID =20A RDS(ON).

H&M Semiconductor

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Datasheet Details

Part number	HM20N06KA
Manufacturer	H&M Semiconductor
File Size	439.17 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM20N06KA Datasheet

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Full PDF Text Transcription

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HM20N06KA N-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.

Published: Aug 12, 2025 |