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HM20P03Q - P-Channel Enhancement Mode Power MOSFET

General Description

The HM20P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • V S = -30V,I = -20A D D RDS(ON) < 34mΩ @ VGS=-4.5V RDS(ON) < 23mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Full PDF Text Transcription for HM20P03Q (Reference)

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HM20P03Q P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM20P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with...

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ology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● V S = -30V,I = -20A D D RDS(ON) < 34mΩ @ VGS=-4.

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