Platinum temperature sensor in thin-film technolog.
Samsung semiconductor
KM416C256D - 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C256D, KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 262,144 x 16 bit Fast Page Mode C.
Samsung semiconductor
KM416C4004C - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4004C, KM416C4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Da.
Samsung semiconductor
KM416C4104C - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4004C, KM416C4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Da.
Samsung Semiconductor
KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM
KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES • JEDEC standard 3.3V power supply • SSTL_3 (Class II) compatible wit.
Samsung Electronics
KM416S1120AT - 521K x 16-Bit x 2 Bank SDRAM
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Samsung semiconductor
KM416S8030BN - 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0..
ABOV
A34M416 - 32-bit Microcontroller
A34M418, A34M416, A34M414 Features 32-bit Cortex-M4F based High-performance Microcontroller Datasheet Version 1.01 Core High performance Cortex-M.
Samsung semiconductor
KM416L8031BT - 128Mb DDR SDRAM
128Mb DDR SDRAM Target DDR SDRAM Specification Version 0.61 - 1 of 63 - REV. 0.61 August 9. '99 128Mb DDR SDRAM Target Revision History Versio.
Samsung semiconductor
KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,57.
Samsung semiconductor
KM416C1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,57.
Samsung semiconductor
KM416C1004C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048.
Samsung semiconductor
KM416C1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,57.
Samsung semiconductor
KM416C1200C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,57.
Samsung semiconductor
KM416C1204C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048.
Samsung semiconductor
KM416C254D - 256K x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data.
ETC
KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right t.
Samsung semiconductor
KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-.
Samsung semiconductor
KM416V1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,57.