MATCHED Datasheet | Specifications & PDF Download

FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (

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FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa

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Data Sheet FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% Low offset voltage (VOS): 200 μV maximum (SO

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2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number 2N5564 2N5565 2N5566 VGS(off) (V) −0.5 to −3 −0.5 to −3

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InterFET Product Folder Technical Support Order Now IFN3954-5-6 IFN3954, IFN3955, IFN3956 Dual Matched N-Channel JFET Features • InterFET N0016H

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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 G

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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 G

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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 G

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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 G

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LTC6911-1/LTC6911-2 Dual Matched Amplifiers with Digitally Programmable Gain in MSOP FEATURES s DESCRIPTIO s s s s s s s s s s 3-Bit Digital Gain C

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< C band internally matched power GaAs FET > MGFC42V3436 3.4 – 3.6 GHz BAND / 16W DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs

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< C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs

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Philips Semiconductors Linear Products Product specification Matched quad high-performance low-voltage operational amplifier NE/SA5234 DESCRIPTION

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FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broa

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FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broa

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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