MATCHED Datasheet | Specifications & PDF Download

Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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QPD1026L 1300 W, 65 V, 420 – 450 MHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT

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FLM3439-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37%

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DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • Matched Dual NPN Transistors • Low Power • Hermetically Sealed TO-77 Metal Package • High Relia

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InterFET Product Folder Technical Support Order Now IFN146 IFN146 Dual Matched N-Channel JFET Features • InterFET N0450H Geometry • Low Noise: 1

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BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General descrip

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ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic

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2N5911 | 2N5912 Dual Matched N-Channel JFET - 1 FEATURES LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICA

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FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broa

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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EIB1415-4P UPDATED 06/14/06 14.40-15.35GHz 4W Internally Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance M

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FLM4450-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=41%(Typ.) •

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FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE:

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SW-313-PIN Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input Features  Integral TTL Driver  Low DC Power Consumption  Fast Switching

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InterFET Product Folder Technical Support Order Now IFN5564-5-6 IFN5564, IFN5565, IFN5566 Dual Matched N-Channel JFET Features • InterFET N0072S

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