MB82 Datasheet | Specifications & PDF Download

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Surface Mount Transient Voltage Suppressors (TVS) P6SMB Series 6.8 To 600 V 600W Description The P6SMB series is designed specifically to protect sen

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E-DA SEMICONDUCTOR RoHS Compliant Product P6SMB6.8 - P6SMB550A TRANSIENT VOLTAGE SUPPRESSOR BREAK DOWN VOLTAGE 6.8 to 400 Volt POWER 600 Watt FEAT

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Surface Mount Transient Voltage Suppressors (TVS) P6SMB Series 6.8 To 600 V 600W Description The P6SMB series is designed specifically to protect sen

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P6SMB Series Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 600 W Features ● Glass passivated chip ● 600 W peak pulse power capability with a 10/1

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P6SMB6.8A THRU P6SMB250A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 600 WATT, 6.8 THRU 250 VOLT w

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P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES FEATURES ● Low profile package

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Features P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-

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www.DataSheet4U.com www.DataSheet4U.com

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P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600Watts BREAK DOWN VOLTAGE 6.8 to 400 Volt FEATURES • For surface mounted applicati

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Features P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11432-1E MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) MB82DBS04163C-70L ■ DESCR

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Features P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-

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E-DA SEMICONDUCTOR RoHS Compliant Product P6SMB6.8 - P6SMB550A TRANSIENT VOLTAGE SUPPRESSOR BREAK DOWN VOLTAGE 6.8 to 400 Volt POWER 600 Watt FEAT

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FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11449-2E 32 Mbit Mobile FCRAM 3.0 V, Page Mode MB82DP02183E-65L www.DataSheet4U.com • • • • • TM FEAT

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-11422-3E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory www.

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April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Random Access Memory with Automat

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P6SMB Series Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 600 W Features ● Glass passivated chip ● 600 W peak pulse power capability with a 10/1

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www.vishay.com P6SMB Series Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors Cathode SMB (DO-214AA) Anode (uni

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E-DA SEMICONDUCTOR RoHS Compliant Product P6SMB6.8 - P6SMB550A TRANSIENT VOLTAGE SUPPRESSOR BREAK DOWN VOLTAGE 6.8 to 400 Volt POWER 600 Watt FEAT

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