MD04 Datasheet | Specifications & PDF Download

650V N-Channel MOSFETs PMD04N65M General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 650V D RDSON (MAX.) 2.75Ω ID 4A G UIS, 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S

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EMD04N06FN N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 10

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Sin

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.5Ω ID 4A G UIS, 100% Tested S

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EMD04N04E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 4mΩ ID 155A G UIS, Rg 10

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V

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EMD04N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 80A G UIS, Rg 1

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S

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EMD04N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 100

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EMD04N04H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 4mΩ ID 80A G UIS, Rg 100

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EMD04N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 155A G UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S

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EMD04N08FN N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 5mΩ ID 75A G UIS, Rg 10

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EMD04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 4.6mΩ ID 160A G UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 650V D RDSON (MAX.) 2.75Ω ID 4A G UIS, 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 650V D RDSON (MAX.) 2.75Ω ID 4A G UIS, 100% Tested S

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VS DISPLAY TECHNOLOGY (HK) LTD SPECIFICATION FOR LCD MODULE    Model No.: VS-UTMD043050V.1 ORGANIZED BY RAJU PAU CHECKED BY JOHNSON COMPANY C

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