MDS Datasheet | Specifications & PDF Download

MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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TDP158 SLLSEX2F – DECEMBER 2016 – REVISED APRIL 2024 TDP158 6Gbps, AC-Coupled to TMDS™ or HDMI ™ Level Shifter Redriver 1 Features 3 Description •

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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● ● ● ● 2500V～ MDST 100A / ● ● PWM ● ■ VRRM VRSM IO IFSM I2t VISO Tj Tjm Tstg Md Wt I2t （） M5 （） M5 ■ IRRM VFM Rth

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS1521 – Single N-Channel Trench MOSFET 30V MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mΩ General Description The MDS1521 uses advanced

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MDS60-16 Zhejiang Jing Tai Electronics Co., Ltd. ———————————————————— Features  3 phase bridge rectifier  Package with screw terminals  Isolati

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MDS3604– Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ General Description The M

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MDS3652– Single P-Channel Trench MOSFET MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ General Description The MDS3652 uses advanced Magna

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Changes for the Better MITSUBISHI MELDAS AC SERVO MDS-B-SVJ2 Series Manual for Replacing BNP-B2202B (ENG) www.DataSheet4U.com MITSUBISHI ELECTRIC

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GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS t

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Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features • • • Easy connections Excellent power volume ratio Insulated type 90MD

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CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMIC

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MDS1525 – Single N-Channel Trench MOSFET 30V MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mΩ General Description The MDS1525 uses advanced

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Three Phase Silicon Bridge Rectifier Features • High Surge Capability • Types from 800 V to 1600 V VRRM • Not ESD Sensitive MDS75-08 thru MDS75-16 VR

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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