MG200 Datasheet | Specifications & PDF Download

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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp

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TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The elec

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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High inp

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KMG 4U h S a t e e MINIATURE -105؇ C m o .c Series KMG w w at Ⅲ Miniature .D w Ⅲ General Purpose Ⅲ Solvent Proof Ⅲ‫؀‬ 105؇C Maximum Temperature

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April 2015 MMG200S060B6EN 600V 200A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High shor

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April 2015 MMG200Q120B6TN Version 01 1200V 200A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High shor

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMG2001R2/D Gallium Arsenide CATV Integrated Amplifier

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www.DataSheet4U.com MITSUBISHI IGBT Module MG200Q2YS60A MG200Q2YS60A(1200V/200A 2in1) High Power Switching Applications Motor Control Applications •

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www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm ·

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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Elektronische Bauelemente SMG2007-C -7.2A , -20V , RDS(O ) 19mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies

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August 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat)

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April 2015 MMG200S060DE6EN 600V 200A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High sho

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April 2020 PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switchi

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July 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability

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Metal Glaze Resistors MG Series Feature  Superior performance against environmental condition and overload.  Standard value: 100K-33Meg in E24 ser

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