Datasheet Specifications
- Part number
- MG200Q2YS40
- Manufacturer
- Toshiba ↗
- File Size
- 195.77 KB
- Datasheet
- MG200Q2YS40_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Applications
* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ. ) Maximum Ratings (TaMG200Q2YS40 Distributors
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