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MG200Q2YS40 Datasheet - Toshiba

MG200Q2YS40 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC .

MG200Q2YS40 Datasheet (195.77 KB)

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Datasheet Details

Part number:

MG200Q2YS40

Manufacturer:

Toshiba ↗

File Size:

195.77 KB

Description:

Silicon n channel igbt gtr module.

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MG200Q2YS40 Silicon Channel IGBT GTR Module Toshiba

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