Datasheet Specifications
- Part number
- MG200Q1JS40
- Manufacturer
- Toshiba ↗
- File Size
- 202.03 KB
- Datasheet
- MG200Q1JS40_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 MG200Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input imp.
Applications
* Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) ChMG200Q1JS40 Distributors
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