MG200Q1JS40 Datasheet (Toshiba) - Silicon N Channel IGBT GTR Module

MG200Q1JS40, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 MG200Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case.

Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current