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MG200Q1JS40 Datasheet - Toshiba

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 MG200Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current.

MG200Q1JS40 Datasheet (202.03 KB)

Preview of MG200Q1JS40 PDF

Datasheet Details

Part number:

MG200Q1JS40

Manufacturer:

Toshiba ↗

File Size:

202.03 KB

Description:

Silicon n channel igbt gtr module.

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