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MG200Q1US41 Datasheet - Toshiba

MG200Q1US41_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG200Q1US41

Manufacturer:

Toshiba ↗

File Size:

195.68 KB

Description:

Silicon n channel igbt gtr module.

MG200Q1US41, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case.

Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collecto

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