Datasheet Details
Part number:
MG200Q1US41
Manufacturer:
File Size:
195.68 KB
Description:
Silicon n channel igbt gtr module.
MG200Q1US41_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
MG200Q1US41
Manufacturer:
File Size:
195.68 KB
Description:
Silicon n channel igbt gtr module.
MG200Q1US41, Silicon N Channel IGBT GTR Module
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collecto
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