Datasheet Specifications
- Part number
- MG200Q1US41
- Manufacturer
- Toshiba ↗
- File Size
- 195.68 KB
- Datasheet
- MG200Q1US41_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Applications
* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) l Low saturation voltage : VCE (sat) = 4.0V (Max. ) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-eMG200Q1US41 Distributors
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