Datasheet Specifications
- Part number
- MG200Q2YS50
- Manufacturer
- Toshiba ↗
- File Size
- 251.24 KB
- Datasheet
- MG200Q2YS50_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Applications
* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max. ) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max. ) l Enhancement-mode l Includes a complate half bridge in one ackage. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJMG200Q2YS50 Distributors
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