MG200Q2YS50 Datasheet (Toshiba) - Silicon N Channel IGBT GTR Module

MG200Q2YS50, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a complate half bridge in one ackage.

l The electrodes are isolated from case.

Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate