MG200Q2YS60A Datasheet (Toshiba Semiconductor) - High Power Switching Applications Motor Control Applications

MG200Q2YS60A, High Power Switching Applications Motor Control Applications

www.DataSheet4U.com MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.

(short circuit and over temperature) The electrodes are isolated from case.

Low thermal resistance VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 7 FO E1/C2 4 1 2 3 OT FO E2 Signal terminal 1.