MG200Q1ZS40 Datasheet - Toshiba

MG200Q1ZS40 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector cu.

MG200Q1ZS40 Datasheet (203.06 KB)