MG200Q1ZS11 Datasheet - Toshiba

MG200Q1ZS11 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward cur.

MG200Q1ZS11 Datasheet (410.76 KB)