Datasheet Specifications
- Part number
- MG200Q1ZS11
- Manufacturer
- Toshiba ↗
- File Size
- 410.76 KB
- Datasheet
- MG200Q1ZS11_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input.
Applications
* Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max. ) trr = 0.5µs (Max. ) Low saturation voltage : VCE (sat) = 2.7V (Max. ) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) CharaMG200Q1ZS11 Distributors
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