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MG200Q1ZS11 Silicon N Channel IGBT GTR Module

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Description

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input.

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Applications

* Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max. ) trr = 0.5µs (Max. ) Low saturation voltage : VCE (sat) = 2.7V (Max. ) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) Chara

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Silicon Channel IGBT GTR Module Toshiba
Toshiba MG200Q1ZS11-like datasheet