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MG200Q1ZS11 Datasheet - Toshiba

MG200Q1ZS11_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG200Q1ZS11

Manufacturer:

Toshiba ↗

File Size:

410.76 KB

Description:

Silicon n channel igbt gtr module.

MG200Q1ZS11, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward cur

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