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MG200Q2YS65H IGBT Module Silicon N Channel IGBT

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www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm

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Applications

* Unit: mm
* High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ. ) ― ― 2-109C4A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltag

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MG200Q2YS65H IGBT Module Silicon Channel IGBT Toshiba Semiconductor
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