MG200Q2YS65H Datasheet (Toshiba Semiconductor) - IGBT Module Silicon N Channel IGBT

MG200Q2YS65H, IGBT Module Silicon N Channel IGBT

www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm High input impedance Enhancement-mode The electrodes are isolated from case.

Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.) ― ― 2-109C4A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF