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MG200Q1US51 Silicon N Channel IGBT GTR Module

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Description

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High inp.

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Applications

* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max. ) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max. ) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 465

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Silicon Channel IGBT GTR Module Toshiba
Toshiba MG200Q1US51-like datasheet