Datasheet Specifications
- Part number
- MG200Q1US51
- Manufacturer
- Toshiba ↗
- File Size
- 251.77 KB
- Datasheet
- MG200Q1US51_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Applications
* Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max. ) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max. ) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 465MG200Q1US51 Distributors
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