MG200J2YS50 Datasheet - Toshiba

MG200J2YS50 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A1A Maximum Ratings (Ta = 25°C) Charac.

MG200J2YS50_ToshibaSemiconductor.pdf