Datasheet Specifications
- Part number
- MG200J2YS50
- Manufacturer
- Toshiba ↗
- File Size
- 221.70 KB
- Datasheet
- MG200J2YS50_ToshibaSemiconductor.pdf
- Description
- Silicon N Channel IGBT GTR Module
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The elec.
Applications
* Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IMG200J2YS50 Distributors
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