MI-200 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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ULN2003,04APG/AFWG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic ULN2003APG,ULN2003AFWG ULN2004APG,ULN2004AFWG 7-ch Darlington Sink D

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AB-2003 DigiDice Socket 478 Mini PC System User’s Manual 4200-0382-24 Rev. 1.01 Copyright and Warranty Notice The information in this document is sub

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NTC Thermistor Features This is a Negative Temperature Coefficient Resistor Whose resistance changes with ambient temperature changes. Thermistor comp

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CYBLE-222005-00 EZ-BLE Creator Module Not Recommended for New Designs EZ-BLE Creator Module General Description The Cypress CYBLE-222005-00 is a ful

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VRSM VRRM VDRM (dv/dt)cr ITRMS (maximum values for continuous operation) 2300 A 2800 A 1780 A (55 °C) SKT 1200/04 D – SKT 1200/12 E SKT 1200/14 E S

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Ultra37000 CPLD Family 5V, 3.3V, ISR™ High-Performance CPLDs Features • In-System Reprogrammable™ (ISR™) CMOS CPLDs — JTAG interface for reconfigurab

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® TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additi

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www.DataSheet4U.com S E M I C O N D U C T O R HIN200 thru HIN213 +5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors De

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

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GE Sensing Features • Low cost solid state sensor • Resistance tolerances down to ±2% • High sensitivity to changes in temperature • Suitable for temp

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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www.fairchildsemi.com KH200 Fast Settling, Wideband Operational Amplifier Features I I I I I I General Description The KH200 operational amplifier a

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RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Inte

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www.DataSheet4U.com KM23C32000C(E)T 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word m

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2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943

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UNISONIC TECHNOLOGIES CO., LTD US2005 Preliminary CMOS IC FIXED CURRENT LIMIT POWER DISTRIBUTION SWITCH  DESCRIPTION UTC US2005 is a lo w voltage c

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well su

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F2 Boost Power Module NXH200B100H4F2SG, NXH200B100H4F2SG-R The NXH200B100H4F2SG is a power module containing high−performance IGBTs with rugged anti−

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