MJ-14 Datasheet | Specifications & PDF Download

MJ14002 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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MJ14000 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NP

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MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES

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MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power

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MJ1410 MJ1410 8 BIT FORMAT CONVERTER The MJ1410 is realised in N-channel MaS technology and operates from a single 5V supply. The circuit can be clo

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MJ1444 ~~~I~~~ ~-------------------------- 2 MBIT PCM SIGNALLING CIRCUIT MJ1444 PCM SYNCHRONISING WORD GENERATOR The 2.048 Mbit PCM signalling circu

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252)

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ14002 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic

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MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power

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MJ1440 2 MBIT PCM SIGNALLING CIRCUIT MJ1440 HDB3 ENCODER/DECODER The 2.048 MBit PCM Signalling Circuits comprise a group of circuits which will perf

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e ________ :~ MJ1472 A_DV_A_N_C_E_IN_F_OR_M_A_T_IO_N Advance information is issued to advise Customers of new additions to the Plessey Semicon

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·High DC Current Gain- :

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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MJ1471 2 MBIT PCM SIGNALLING CIRCUIT MJ1471 HDB3 OR AMI ENCODER/DECODER The MJ1471 is an encoder/decoder for pseudo·ternary transmission codes. The

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MJ1474 - PLESSEY _ Semiconductors _ _ _ _ _ _ _A_ DVA_ NCE_INF_ ORM_AT_ION Advance information is issued to advise Customers of new additions to the P

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ14001/D High-Current Complementary Silicon Power Transistors . . . designed for use

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