Datasheet4U.com

MJ11014 Datasheet - INCHANGE

MJ11014 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A *Complement to the PNP MJ11013 *Minimum Lot-to-Lot variations for robust device performance and reliabl.

MJ11014-INCHANGE.pdf

MJ11014 Datasheet Preview — Preview of MJ11014 PDF

MJ11014 Datasheet Preview Page 2

Datasheet Details

Part number:

MJ11014

Manufacturer:

INCHANGE

File Size:

203.85 KB

Description:

Npn transistor.

📁 Related Datasheet

MJ11011 PNP Transistor (INCHANGE)

MJ11012 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)

MJ11012 High-Current Complementary Silicon NPN Transistors (ON Semiconductor)

MJ11012 NPN Transistor (DIGITRON)

MJ11012 NPN Transistor (INCHANGE)

MJ11013 DARLINGTON POWER TRANSISTORS (ON Semiconductor)

MJ11013 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola Inc)

MJ11013 POWER TRANSISTOR (Inchange Semiconductor)

TAGS

MJ11014 MJ11014 NPN Transistor INCHANGE

MJ11014 Distributor