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MJ11014 - NPN Transistor

MJ11014 Description

isc Silicon NPN Darlington Power Transistor MJ11014 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vol.

MJ11014 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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Datasheet Details

Part number
MJ11014
Manufacturer
INCHANGE
File Size
203.85 KB
Datasheet
MJ11014-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJ11014-like datasheet