MJ11014
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Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturatio
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High-reliability discrete products and engineering services since 1977
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Order this document by MJ11012/D
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
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Order this document by MJ11012/D
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
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