MJ11011 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.
MJ11011 is PNP Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| MJ11012 | NPN Transistor |
| MJ11014 | NPN Transistor |
| MJ11015 | PNP Transistor |
| MJ11017 | PNP Transistor |
| MJ11018 | NPN Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.