Datasheet Details
| Part number | MJ11011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.85 KB |
| Description | PNP Transistor |
| Datasheet | MJ11011-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor MJ11011.
| Part number | MJ11011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.85 KB |
| Description | PNP Transistor |
| Datasheet | MJ11011-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to NPN Type MJ11012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -30 A ICM Collector Current-Peak -50 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 200 W 200 ℃ Tstg Storage Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.87 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A;
| Part Number | Description |
|---|---|
| MJ11012 | NPN Transistor |
| MJ11014 | NPN Transistor |
| MJ11015 | PNP Transistor |
| MJ11017 | PNP Transistor |
| MJ11018 | NPN Transistor |
| MJ11019 | PNP Transistor |
| MJ11020 | NPN Transistor |
| MJ11022 | NPN Transistor |
| MJ11028 | NPN Transistor |
| MJ11029 | PNP Transistor |