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MJ1000 Datasheet | Specifications & PDF Download

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MJ1000 Medium-Power Complementary Silicon Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

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MJ1000 (INCHANGE)

NPN Transistor

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- :
(4 views)
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MJ10004 (NTE)

Silicon NPN Transistor

MJ10004 Silicon NPN Transistor HV Darlington Power Amp, Switch w/Base−Emitter Speedup Diode TO−3 Type Package Description: The MJ10004 is a silicon N
(3 views)
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MJ10005P (INCHANGE)

NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel coll
(3 views)
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MJ10005 (DIGITRON)

NPN Transistor

MJ10004-MJ10005 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES • Availabl
(3 views)
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MJ10004 (DIGITRON)

NPN Transistor

MJ10004-MJ10005 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES • Availabl
(3 views)
INCHANGE Logo

MJ10005 (INCHANGE)

NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10005 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic
(3 views)
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MJ10002 (INCHANGE)

NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minim
(3 views)
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